LBC807-16WT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽPNP complement: LBC807 Series. ƽWe declare that the material of product compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC807-16WT1G S-LBC807-16WT1G 3 DEVICE MARKING AND ORDERING INFORMATION 1 2 Device LBC807-16WT1G S-LBC807-16WT1G LBC807-16WT3G S-LBC807-16WT3G Marking 5A 5A Shipping 3000/Tape&Reel 10000/Tape&Reel SC-70 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C Value –45 –50 –5.0 –500 Unit V V V mAdc 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A =25 °C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA PD R θJA T J , Tstg 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Max 150 1.2 833 200 1.6 625 –55to+150 Unit mW mW/°C °C/W mW mW/°C °C/W °C Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LBC807-16WT1G S-LBC807-16WT1G ELECTRICAL CHARACTERIST...