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LBC848BDW1T1 Datasheet

Part Number LBC848BDW1T1
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description (LBC846xDW1T1 - LBC848xDW1T1) Dual General Purpose Transistors NPN Duals
Datasheet LBC848BDW1T1 DatasheetLBC848BDW1T1 Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors www.datasheet4u.com NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. 6 5 4 LBC846BDW1T1 LBC847BDW1T1 LBC847CDW1T1 LBC848BDW1T1 LBC848CDW1T1 6 5 4 Q2 Q1 See Table 1 2 3 1 2 3 SOT-363 /SC-88 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector C.

  LBC848BDW1T1   LBC848BDW1T1






Part Number LBC848BDW1T1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Dual-Channel Transistor
Datasheet LBC848BDW1T1 DatasheetLBC848BDW1T1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. 6 54 LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G Q2 12 Q1 3 See Table MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Collector–Base Voltag.

  LBC848BDW1T1   LBC848BDW1T1







(LBC846xDW1T1 - LBC848xDW1T1) Dual General Purpose Transistors NPN Duals

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors www.datasheet4u.com NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. 6 5 4 LBC846BDW1T1 LBC847BDW1T1 LBC847CDW1T1 LBC848BDW1T1 LBC848CDW1T1 6 5 4 Q2 Q1 See Table 1 2 3 1 2 3 SOT-363 /SC-88 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current -Continuous Symbol V CEO V CBO V EBO BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. Symbol PD Max 380 250 3.0 328 –55 to +150 Unit mW mW mW/°C °C/W °C R θJA T J , T stg ORDERING INFORMATION Device LBC846BDW1T1 LBC847BDW1T1 LBC847CDW1T1 LBC848BDW1T1 LBC848CDW1T1 Package SOT–363 SOT–363 SOT–363 SOT–363 SOT–363 Shipping 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel LBC846b–1/5 LESHAN RADIO COMPANY, LTD. LBC846BDW1T1, LBC847BDW1T1, LBC847CDW1T1, LBC848BDW1T1, LBC848CDW1T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) www.datasheet4u.com Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 10 mA) LBC846 Series LBC847 Series LBC848 Series C.


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