LBC856BDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. Device Marking: (S-)LBC856ADW1T1G= 3A (S-)LBC856BDW1T1G= 3B (S-)LBC857BDW1T1G= 3F (S-)LBC857CDW1T1G= 3G (S-)LBC858BDW1T1G= 3K (S-)LBC858CDW1T1G = 3L MAXIMUM RATINGS Rating Symbol BC856 BC857 BC858 Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous VCEO VCBO VEBO IC –65 –80 –5.0 –100 –45 –50 –5.0 –100 –30 –30 –5.0 –100 V V V mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation Per Device FR–5 Board (Note 1.) TA = 25°C Derate Above 25°C PD Thermal Resistance, Junction to Ambient RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR–5 = 1.0 x 0.75 x 0.062 in Max 380 250 3.0 328 –55 to +150 Unit mW mW/°C °C/W °C ORDERING INFORMATION Device LBC85*BDW1T1G LBC85*BDW1T3G Shipping 3000/Tape & Reel 10000/Tape & Reel LBC85** DW1T1G S-LBC85** DW1T1G 65 4 1 2 3 SOT-363 (3) (2) (1) Q1 Q2 (4) (5) (6) DEVICE MARKING See Table Rev.O 1/6 LESHAN RADIO COMPANY, LTD. LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G, LBC858BDW1T1G, L BC858CDW1T1G S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G,S-LBC857CDW1T1G, S-LBC858BDW1T1G, S-L BC858CDW1T1G ELECTRICAL CHARACTERISTICS (TA...