LBCW70LT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors www.datasheet4u.com PNP Silicon 3 COLLECTOR LBCW69LT1G LBCW70LT1G 3 1 BASE Featrues We declare that the material of product compliance with RoHS requirements. 2 EMITTER 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6 Rating Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V EBO Value – 45 – 5.0 – 100 Unit Vdc Vdc mAdc SOT–23 (TO–236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ , Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING LBCW69LT1G = H1; LBCW70LT1G= H2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0 ) Collector–Emitter Breakdown Voltage (IC = –100 µAdc, V EB = 0 ) Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0) Collector Cutoff Current (VCE = –20 Vdc, I E = 0 ) (VCE = –20 Vdc, I E = 0 , TA = 100°C) 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CES V (BR)EBO I CEO — — – 100 – 10 nAdc µAdc – 45 – 50 – 5.0 — — — Vdc Vdc Vdc 1/7 LESHAN RADIO COMPANY, L...