LBE2003S

DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Mar 03 Philips Semiconductors Product specification NPN microwave power transistors FEATURES Diffused emitter ballasting resistors Self-aligned process entirely ion implanted and gold metallization Optimum temperature profile Excellent performance and reliability. APPLICATIONS Common emitter class-A linear power amplifiers up to 4 GHz. PIN 1 2 3 4 DESCRIPTION LBE2003S; LBE2009S; LCE2009S The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. PINNING DESCRIPTION collector emitter base emitter handbook, halfpage 4 handbook, halfpage 4 c 3 1 3 c b e 2 Top view Marking code: LCE2009S = 408. MAM330 b e 2 1 Top view MAM329 Marking code: LBE2003S = 407; LBE2009S = 409. Fig.1 Simplified outline and symbol (SOT441A). Fig.2 Simplified outline and symbol (SOT442A). QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier. TYPE NUMBER LBE2003S LBE2009S LCE2009S MODE OF OPERATION Class-A (CW) linear Class-A (CW) linear f (GHz) 2 2 VCE (V) 18 18 IC (mA) 30 110 PL1 (mW) ≥200 ≥700 Gpo (dB) ≥10 ≥9 Zi (Ω) 6.2 + j30 7.5 + j15 ZL (Ω) 17.5 + j7 17.5 + j39 WARNING Product and enviro...