LD2B-5T

General Purpose Silicon Sensors (Series 5T) The Centronic Series 5T detectors offer high blue sensitivity coupled with high shunt resistance and low dark leakage current. They are particularly suited to low light level applications from 430-900 nm where the highest signal to noise ratio is important. They may be operated photovoltaically or with a reverse bias of up to 12V where lower capacitance is needed. The 5T range provides the most economic solution for all applications where high speed of response above 800 nm is not critical. Electrical / Optical Specifications Characteristics measured at 22°C (±2) ambient, and a reverse bias of 12 volts, unless otherwise stated. Shunt Resistance measured at ± 10mV. For rise time on Quadrants, Linear and Matrix Arrays take figures for single element diodes having equivalent active area Single Elements Type No. Active Area Responsivity A/W λ = 436 nm Min. 0.18 0.18 0.18 0.18 0.18 0.18 0.18 0.18 0.18 0.18 Typ. 0.21 0.21 0.21 0.21 0.21 0.21 0.21 0.21 0.21 0.21 Dark Current (nA) NEP WHz-½ λ = 436 nm Typ. Capacitance pF Shunt Resistance Meg. ohms Min. 250 100 100 60 50 20 5 3 2 1 Typ. 1000 700 600 300 200 100 25 12 15 5 7 9 9 10 12 20 26 30 45 125 1 1 3 3 3 8 / 23 9 9 13 15 Risetime ns λ = 820 nm RL = 50 Ω Typ. Package mm2 OSD1-5T 1 OSD3-5T 3 OSD5-5T 5 OSD7.5-5T 7.5 OSD15-5T 15 OSD35-5T 35 OSD50-5T 50 OSD60-5T 62 OSD100-5T 100 OSD300-5T 300 mm 1.13 dia 2.16 x 1.4 2.52 dia 2.75 x 2.75 3.8 x 3.8 5.9 x 5.9 7.98 dia 7.9 x 7.9 11.3 dia 19.54...