LESHAN RADIO COMPANY, LTD.
Dual Serise Switching Diodes
FEATURES
• Ultra high speed switching • Suitable for high pack...
LESHAN RADIO COMPANY, LTD.
Dual Serise Switching Diodes
FEATURES
Ultra high speed switching Suitable for high packing density layout. High reliability. We declare that the material of product is ROHS compliant.
z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
LDAN202KLT1G S-LDAN202KLT1G
LDAN202KLT3G S- LDAN202KLT3G
Marking N
N
Shipping 3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS (Each Diode)
Rating
Symbol
Reverse Voltag Forward Current Peak Forward Surge Current Forward
voltage(If = 100mA ) Reverse current (Vr = 70V )
VR Io IFM(surge) VF IR
Capacitance between terminals(f =1MHz) CT
Reverse recovery time(Vr= 6V,If=5 mA)
Trr
Value 80 100 300 1.2 0.1
3.5 4
Unit Vdc mAdc mAdc V uA
pF nS
LDAN202KLT1G S-LDAN202KLT1G
3
1 2
SOT –23
ANODE 1
ANODE 2
3 CATHODE
POWER DISSIPATION : Pd / Pd Max.(%) FORWARD CURRENT : IF (mA) REVERSE CURRENT : IR (nA)
ELECTRICAL CHARACTERISTIC CURVES
125
50
100
75
50
25
0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE :Ta (ºC)
Fig.1 Power attenuation curve
20
10
5
Ta=85ºC
2
50ºC
25ºC
1
0ºC
0.5
−30ºC
0.2 0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD
VOLTAGE : VF (V)
Fig.2 Forward characteristics
1000 100 10 1 0.1
Ta=100°C 75°C 50°C 25°C 0°C
−25°C
0.010
10 20 30 40 50 60 70 80 REVERSE
VOLTAGE : VR (V)
Fig.3 Reverse characteristics
Rev.A 1/3
CAPACITANCE BETWEEN TERMINALS : CT...