LED18FC-PR
TECHNICAL DATA
Mid-Infrared Light Emitting Diode, Flip-Chip Design
Light Emitting Diodes with central wavelength 1.85 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement. LED18FC-PR has a stable ouput power and a lifetime more then 80000 hours.
Features
• Structure: GaInAsSb/AlGaAsSb, Flip-Chip Design • Peak Wav.
Mid-Infrared Light Emitting Diode
LED18FC-PR
TECHNICAL DATA
Mid-Infrared Light Emitting Diode, Flip-Chip Design
Light Emitting Diodes with central wavelength 1.85 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement. LED18FC-PR has a stable ouput power and a lifetime more then 80000 hours.
Features
• Structure: GaInAsSb/AlGaAsSb, Flip-Chip Design • Peak Wavelength: typ. 1.85 µm • Optical Ouput Power: typ. 0.9 mW qCW • Package: TO-18, with PR and without window
Specifications
Item
Peak Wavelength FWHM Quasi-CW Optical Power Pulsed Optical Power Switching Time Operation Voltage Operating Temperature Emitting Area Soldering Temperature
Package
Condition
T=300 K 150 mA CW
200 mA qCW
Min. 1.80 100
0.7
Rating Typ. 1.85 150
0.9
Max. 1.89 200
1.4
Unit
µm nm
mW
1 A 15 20 35 mW
T=300 K 200 mA qCW
10
20 30 ns V
-240 … +50
°C
670x770
µm
180 °C
TO-18, with non-removeable cap and transparent window
(Unit: mm)
Operating Regime
Quasi-CW • Maximum current 220 mA • Recommended current 150-200mA
Pulsed • Maximum current 1 A (puls lenght 500 ns, repetition rate 2kHz)
06.10.2010
LED18FC-PR
1 of 2
Typical Performance Curves
06.10.2010
LED18FC-PR
2 of 2
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