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LF2805A Datasheet

Part Number LF2805A
Manufacturers Tyco Electronics
Logo Tyco Electronics
Description RF MOSFET Power Transistor/ 5W/ 28V 500 - 1000 MHz
Datasheet LF2805A DatasheetLF2805A Datasheet (PDF)

= == -----’ = RF MOSFET Power Transistor, 5W, 28V 500 - 1000 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor AppIications . *Broadband Linear Operation 500 MHz to 1400 MHz LF2805A Absolute Maximum Ratings at 25°C Electrical Characteristics at 25°C Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage ForwardTransconductance.

  LF2805A   LF2805A






Part Number LF2805A
Manufacturers MA-COM
Logo MA-COM
Description RF Power MOSFET Transistor
Datasheet LF2805A DatasheetLF2805A Datasheet (PDF)

LF2805A RF Power MOSFET Transistor 5 W, 500 - 1000 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  Common source configuration  Lower noise floor  Applications Broadband linear operation 500 MHz to 1400 MHz  RoHS Compliant Absolute Maximum Ratings @ 25°C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance .

  LF2805A   LF2805A







RF MOSFET Power Transistor/ 5W/ 28V 500 - 1000 MHz

= == -----’ = RF MOSFET Power Transistor, 5W, 28V 500 - 1000 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor AppIications . *Broadband Linear Operation 500 MHz to 1400 MHz LF2805A Absolute Maximum Ratings at 25°C Electrical Characteristics at 25°C Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage ForwardTransconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Symbol BV,,, ‘Dss IGSS VGSCTW GM C ISS Coss CRSS GP ‘1D VSWR-T 10 50 2.0 Min 65 - Max 1.0 1.0 6.0 Units V mA p-4 V lest Conditions V,,=O.O V, 1,,=2.0 mA V,,=28.0 V, V,,=O.O V v,,=20 v, v,,=o.o v V&O.0 V&O.0 V&8.0 V, l,,=lO.O mA V, i&00.0 mA, AVGs=l .O V, 80 us Puke 80 7 mS PF PF pF V, F-l.0 MHz 5 2.4 V,,=28.0 V, F-1 .OMHz V,,=28.0 V, F=l .O MHz V,,d8.0 V, I,,=50 mA, PO,+0 W, F=l .O GHz W, F=l .OGHz 2O:l dB % - V,,=28.0 V, I,,=50 mA, P,s5.0 V,,=28.0 V, I,,=50 mA, P,&%O W, F=l .OGHz RF MOSFET Power Transistor, 5W, 28V LF2805A v2.00 Typical Broadband Performance Curves POWER OUTPUT 7 6 - CAPACITANCES 7 vs VOLTAGE vs VOLTAGE mA F=l .O MHz F=l .O GHz P,,=O.5 W I,,=50 GAIN vs FREQUENCY V,,=28 20 EFFICIENCY W V,,=28 vs FREQUENCY mA P,,=5.0 W V I,,=50 mA P0,,=5.0 V I,,=50 15 s ‘0 210 z 5 - 500 700 1000 1400 500 750 1000 1250 1400 FREQUENCY (MHz).


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