SiC Schottky Diode
LFUSCD20120B, 1200 V, 20 A, TO-247 3-lead
LFUSCD20120B
RoHS Pb
Description
The LFUSCD series of silicon carbide (SiC) Schottky diodes has near-zero recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. The diode series is ideal for applications where improvements in efficiency, reliability, and...
