LH5116

LH5116/H FEATURES 2,048 × 8 bit organization Access time: 100 ns (MAX.) Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 µW (MAX.) Single +5 V power supply Fully-static operation TTL compatible I/O Three-state outputs Wide temperature range available LH5116H: -40 to +85°C Packages: 24-pin, 600-mil DIP 24-pin, 300-mil SK-DIP 24-pin, 450-mil SOP CMOS 16K (2K × 8) Static RAM DESCRIPTION The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE). PIN CONNECTIONS 24-PIN DIP 24-PIN SK-DIP 24-PIN SOP A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 GND TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 Vcc A8 A9 WE OE A10 CE I/O8 I/O7 I/O6 I/O5 I/O4 5116-1 Figure 1. Pin Connections for DIP, SK-DIP, and SOP Packages 1 LH5116/H CMOS 16K (2K × 8) Static RAM ROW DECODERS ROW ADDRESS BUFFERS A0 8 A5 3 A6 2 A7 1 A8 23 A9 22 A10 19 I/O1 9 I/O2 10 I/O3 11 I/O4 13 I/O5 14 I/O6 15 I/O7 16 I/O8 17 MEMORY CELL ARRAY (128 x128) 24 VCC 12 GND CE DATA CONTROL COLUMN I/O CIRCUIT COLUMN DECODERS COLUMN ADDRESS BUFFERS CE CE 18 WE 21 OE 20 4 A4 5 A3 6 A2 7 A1 5116-2 Figure 2. LH5116/H Block Diagram PIN DESCRIPTION SIGNAL PIN NAME SIGNAL PIN NAME A0 - A10 CE OE WE Address input Chip Enable input Output Enable input Write Enable input I/O1 - I/O8 VCC GND Data input/output Power supply Ground TRUTH TABLE CE OE WE MOD...