Advanced Technical Information
LKK 47-06C5
VDSS = 600 V ID25 = 47 A Ω/MOSFET RDS(on) max = 45 m
Dual CoolMOS ™ 1) Powe...
Advanced Technical Information
LKK 47-06C5
VDSS = 600 V ID25 = 47 A Ω/
MOSFET RDS(on) max = 45 m
Dual CoolMOS ™ 1) Power
MOSFET
Common Source Topology DCB isoated package
4
D1 T1
2
G1
3
S
T2
1 2 3 4 5
1
G2
5
D2
MOSFET T1/T2 Symbol VDSS VD1D2 VGS ID25 ID90 EAS EAR TC = 25°C TC = 90°C single pulse repetitive ID = 11 A; TC = 25°C Conditions TVJ = 25°C TVJ = 25°C Maximum Ratings 600 ±600 ±20 47 32 1950 3 V V V A A mJ mJ
Features
fast CoolMOS ™ 1) power
MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density
Applications
AC Switch - power regulation of AC heating - light dimming Power factor correction (PFC) interleaved operation mode Push pull converter
1)
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 40 80 2.5 3 50 100 6800 320 150 35 50 30 20 100 10 0.25 190 3.5 10 45 m Ω mΩ V µA µA nA pF pF nC nC nC ns ns ns ns 0.45 K/W K/W
RDSon RDSon VGSth IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC RthCH
VGS = 10 V; ID = 44 A total between D1 and D2 VG1S = VG2S = 10 V; ID = 44 A VDS = VGS; ID = 3 mA VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz VGS= 0 to10 V; VDS = 400 V; ID = 44 A
CoolMOS™ is a trademark of Infineon Technologies AG.
VGS= 10 V; VDS = 400 V; ID = 44 A; RG = 3.3 Ω
with heatsink ...
