LL4151

LL4151 Vishay Telefunken Silicon Epitaxial Planar Diodes Features D Electrical data identical with the device 1N4151 Applications 94 9371 Extreme fast switches Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation Junction temperature Storage temperature range Test Conditions tp=1ms Type Symbol VRRM VR IFSM IFRM IF IFAV PV Tj Tstg Value 75 50 2 500 300 150 500 175 –65...+175 Unit V V A mA mA mA mW °C °C VR=0 Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Test Conditions Type IF=50mA VR=50V VR=50V, Tj=150°C Breakdown voltage IR=5mA, tp/T=0.01, tp=0.3ms Diode capacitance VR=0, f=1MHz, VHF=50mV Reverse recovery y IF=IR=10mA, iR=1mA time IF=10mA, VR=6V, iR=0.1xIR, RL=100W Symbol VF IR IR V(BR) CD trr trr Min Typ 0.88 Max 1 50 50 2 4 2 Unit V nA mA V pF ns ns 75 Document Number 85559 Rev. 3, 01-Apr-99 www.vishay.de FaxBack +1-408-970-5600 1 (4) LL4151 Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified) 100 CD – Diode Capacitance ( pF ) Scattering Limit I R – Reverse Current ( mA ) 10 3.0 2.5 2.0 1.5 1.0 0.5 0 0 94 9151 f = 1 MHz Tj = 25°C 1 0.1 VR = 50 V 0.01 40 80 120 160 200 Tj – Junction Temperature ( °C ) 0.1 94 9153 ...