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LM113

National Semiconductor

Reference Diode

LM113 LM313 Reference Diode December 1994 LM113 LM313 Reference Diode General Description The LM113 LM313 are temperat...


National Semiconductor

LM113

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Description
LM113 LM313 Reference Diode December 1994 LM113 LM313 Reference Diode General Description The LM113 LM313 are temperature compensated low voltage reference diodes They feature extremely-tight regulation over a wide range of operating currents in addition to an unusually-low breakdown voltage and good temperature stability The diodes are synthesized using transistors and resistors in a monolithic integrated circuit As such they have the same low noise and long term stability as modern IC op amps Further output voltage of the reference depends only on highly-predictable properties of components in the IC so they can be manufactured and supplied to tight tolerances Dynamic impedance of 0 3X from 500 mA to 20 mA Temperature stability typically 1% overb55 C to 125 C range (LM113) 0 C to 70 C (LM313) Y Tight tolerance g 5% g 2% or g 1% The characteristics of this reference recommend it for use in bias-regulation circuitry in low-voltage power supplies or in battery powered equipment The fact that the breakdown voltage is equal to a physical property of silicon the energy-band gap voltage makes it useful for many temperature-compensation and temperature-measurement functions Y Y Features Y Low breakdown voltage 1 220V Schematic and Connection Diagrams Metal Can Package Order Number LM113H LM113H 883 LM113-1H LM113-1H 883 LM113-2H LM113-2H 883 or LM313H See NS Package Number H02A TL H 5713 – 1 Typical Applications Low Voltage Regulator Level Detector for Photodiode Solid tant...




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