LM5109B-Q1

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community LM5109B-Q1 SNVSAG6A – NOVEMBER 2015 – REVISED DECEMBER 2015 LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1 Qualified for Automotive Applications AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 – Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A Drives Both a High-Side and Low-Side N-Channel MOSFET 1-A Peak Output Current (1.0-A Sink/1.0-A Source) Independent TTL/CMOS Compatible Inputs Bootstrap Supply Voltage to 108-V DC Fast Propagation Times (30 ns Typical) Drives 1000-pF Load with 15-ns Rise and Fall Times Excellent Propagation Delay Matching (2 ns Typical) Supply Rail Under-Voltage Lockout Low Power Consumption Thermally-Enhanced WSON-8 Package 3 Description The LM5109B-Q1 is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating highside driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The devi...