LM8050I

LM8050I, LM8050J Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Symbol RθJA RθJC Value 25 30 6.0 800 Unit Vdc Vdc Vdc mAdc 625 mW 5.0 mW/°C 1.5 12 –55 to +150 Watts mW/°C °C Max Unit 200 °C/W 83.3 °C/W http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER 1 23 TO–92 CASE 29 STYLE 1 MARKING DIAGRAMS LM 8050x YWW LM8050x = Specific Device Code x = I or J Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping LM8050I TO–92 5000 Units/Box LM8050J TO–92 5000 Units/Box © Semiconductor Components Industries, LLC, 2001 August, 2001 – Rev. 0 1 Publication Order Number: LM8050I/D LM8050I, LM8050J ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 25 – – Vdc Collector–Base Breakdown Voltage (IC = 0.5 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) V(BR)CBO 30 – – Vdc V(BR)EBO 6.0 – – Vdc ICBO – – 50 nAdc ON CHARACTERISTICS DC Cur...