LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN Silicon
We declare that material of product complianc...
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN Silicon
We declare that material of product compliance with ROHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS Rating
Collector–Emitter
Voltage Collector–Base
Voltage Emitter–Base
Voltage Collector Current – Continuous
THERMAL CHARACTERISTICS Characteristic
Total Package Dissipation (Note 1) TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
ORDERING INFORMATION
Symbol VCEO VCBO VEBO IC
Value 40 75 6.0 600
Unit Vdc Vdc Vdc mAdc
Symbol PD
Max 150
Unit mW
RqJA
833 °C/W
TJ, Tstg –55 to +150 °C
Device
LMBT2222ADW1T1G S-LMBT2222ADW1T1G LMBT2222ADW1T3G S-LMBT2222ADW1T3G
Marking
XX XX
Shipping
3000/Tape & Reel 10000/Tape & Reel
LMBT2222ADW1T1G S-LMBT2222ADW1T1G
6 5
4
1 2
3
SC-88
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
Rev.O 1/7
LESHAN RADIO COMPANY, LTD.
LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown
Voltage (IC = 10 mAdc, IB = 0)
Collector–Base Breakdown
Voltage (IC = 10 mAdc, IE = 0)
Emitter–Base Breakdown
Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 125°C)
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
Base Cutoff C...