LMBT2222ADW1T3G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Silicon We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous THERMAL CHARACTERISTICS Characteristic Total Package Dissipation (Note 1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature ORDERING INFORMATION Symbol VCEO VCBO VEBO IC Value 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc Symbol PD Max 150 Unit mW RqJA 833 °C/W TJ, Tstg –55 to +150 °C Device LMBT2222ADW1T1G S-LMBT2222ADW1T1G LMBT2222ADW1T3G S-LMBT2222ADW1T3G Marking XX XX Shipping 3000/Tape & Reel 10000/Tape & Reel LMBT2222ADW1T1G S-LMBT2222ADW1T1G 6 5 4 1 2 3 SC-88 (3) (2) (1) Q1 Q2 (4) (5) (6) Rev.O 1/7 LESHAN RADIO COMPANY, LTD. LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 125°C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Base Cutoff C...