LMBT6427LT3G

LESHAN RADIO COMPANY, LTD. Darlington Transistors NPN Silicon z W. e declare that the material of product compliance with RoHS requirements. z .S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering Information Device LMBT6427LT1G S-LMBT6427LT1G LMBT6427LT3G S-LMBT6427LT3G MAXIMUM RATINGS Marking 1V 1V Shipping 3000/Tape&Reel 10000/Tape&Reel LMBT6427LT1G S-LMBT6427LT1G 3 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C THERMAL CHARACTERISTICS Value 40 40 12 500 Unit Vdc Vdc Vdc mAdc Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 417 –55 to +150 mW/°C °C/W °C DEVICE MARKING (S-)LMBT6427LT1G = 1V ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = 10 mAdc, V BE = 0) Collector–Base Breakdown Voltage (I C = 100 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector Cutoff Current ( V CE = 25Vdc, I...