LMBT6428LT1G

LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device (S-)LMBT6428LT1G (S-)LMBT6428LT3G (S-)LMBT6429LT1G (S-)LMBT6429LT3G Marking 1KM 1KM M1L M1L Shipping 3000/Tape & Reel 10000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel MAXIMUM RATINGS Rating Value Symbol 6428LT1 6429LT1 Unit Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C 50 45 60 55 6.0 200 Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS LMBT6428LT1G LMBT6429LT1G S-LMBT6428LT1G S-LMBT6429LT1G 3 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) 3 COLLECTOR 1 BASE Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C 417 –55 to +150 °C/W °C 2 EMITTER (S-)LMBT6428LT1G = 1KM, (S-)LMBT6429LT1G = M1L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) V (BR)CEO Vdc...