LESHAN RADIO COMPANY, LTD.
Amplifier Transistors
NPN Silicon
z We declare that the material of product compliance with...
LESHAN RADIO COMPANY, LTD.
Amplifier Transistors
NPN Silicon
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
(S-)LMBT6428LT1G (S-)LMBT6428LT3G (S-)LMBT6429LT1G (S-)LMBT6429LT3G
Marking
1KM 1KM M1L M1L
Shipping
3000/Tape & Reel 10000/Tape & Reel
3000/Tape & Reel 10000/Tape & Reel
MAXIMUM RATINGS Rating
Value Symbol 6428LT1 6429LT1 Unit
Collector–Emitter
Voltage
V CEO
Collector–Base
Voltage
V CBO
Emitter–Base
Voltage
V EBO
Collector Current — Continuous I C
50 45 60 55
6.0 200
Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
LMBT6428LT1G LMBT6429LT1G S-LMBT6428LT1G S-LMBT6429LT1G
3
1 2
CASE 318–08, STYLE 6 SOT–23 (TO–236AB)
3 COLLECTOR
1 BASE
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
DEVICE MARKING
Symbol PD
RθJA PD
RθJA TJ , Tstg
Max Unit
225 mW 1.8 mW/°C 556 °C/W
300 mW 2.4 mW/°C
417 –55 to +150
°C/W °C
2 EMITTER
(S-)LMBT6428LT1G = 1KM, (S-)LMBT6429LT1G = M1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown
Voltage(3)
V (BR)CEO
Vdc...