LESHAN RADIO COMPANY, LTD.
High Voltage Transistor PNP Silicon
FEATURE
ƽHigh voltage. ƽFor Telephony or Professional c...
LESHAN RADIO COMPANY, LTD.
High
Voltage Transistor PNP Silicon
FEATURE
ƽHigh
voltage. ƽFor Telephony or Professional communication equipment applications. ƽWe declare that the material of product compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
(S-)LMBTA92LT1G
2D
3000/Tape&Reel
(S-)LMBTA92LT3G
2D
10000/Tape&Reel
(S-)LMBTA93LT1G
2E
3000/Tape&Reel
(S-)LMBTA93LT3G
2E
10000/Tape&Reel
LMBTA92LT1G LMBTA93LT1G S-LMBTA92LT1G S-LMBTA93LT1G
3
1 2
SOT–23
MAXIMUM RATINGS Rating
Value Symbol LMBTA92 LMBTA93 Unit
Collector–Emitter
Voltage
V CEO
Collector–Base
Voltage
V CBO
Emitter–Base
Voltage
V EBO
Collector Current — Continuous I C
–300 –200 Vdc
–300 –200 Vdc
–5.0 Vdc
–500
mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
RθJA PD
RθJA TJ , Tstg
Max 225
1.8 556 300
2.4 417 –55 to +150
1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Unit mW
mW/°C °C/W mW
mW/°C °C/W
°C
1 BASE
3 COLLECTOR
2 EMITTER
Rev.A 1/4
LESHAN ...