LMBTA93LT1G

LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon FEATURE ƽHigh voltage. ƽFor Telephony or Professional communication equipment applications. ƽWe declare that the material of product compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping (S-)LMBTA92LT1G 2D 3000/Tape&Reel (S-)LMBTA92LT3G 2D 10000/Tape&Reel (S-)LMBTA93LT1G 2E 3000/Tape&Reel (S-)LMBTA93LT3G 2E 10000/Tape&Reel LMBTA92LT1G LMBTA93LT1G S-LMBTA92LT1G S-LMBTA93LT1G 3 1 2 SOT–23 MAXIMUM RATINGS Rating Value Symbol LMBTA92 LMBTA93 Unit Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C –300 –200 Vdc –300 –200 Vdc –5.0 Vdc –500 mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RθJA PD RθJA TJ , Tstg Max 225 1.8 556 300 2.4 417 –55 to +150 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. Unit mW mW/°C °C/W mW mW/°C °C/W °C 1 BASE 3 COLLECTOR 2 EMITTER Rev.A 1/4 LESHAN ...