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LMG1020
SNOSD45B – FEBRUARY 2018 ...
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LMG1020
SNOSD45B – FEBRUARY 2018 – REVISED OCTOBER 2018
LMG1020 5-V, 7-A, 5-A Low-Side GaN and
MOSFET Driver For 1-ns Pulse Width Applications
1 Features
1 Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs
1 ns Minimum Input Pulse Width Up to 60 MHz Operation 2.5 ns Typical, 4.5 ns Maximum Propagation
Delay 400 ps Typical Rise and Fall Time 7-A Peak Source and 5-A Peak Sink Currents 5-V Supply
Voltage UVLO and Overtemperature Protection 0.8 mm × 1.2 mm WCSP Package
2 Applications
LiDAR Time-of-Flight Laser Drivers Facial Recognition Class-E Wireless Chargers VHF Resonant Power Converters GaN-Based Synchronous Rectifier Augmented Reality
3 Description
The LMG1020 device is a single, low-side driver designed for driving GaN FETs and logic-level
MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low side drivers. The design simplicity of the LMG1020 enables extremely fast propagation delays of 2.5 nanoseconds and minimum pulse width of 1 nanosecond. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.
The driver features under
voltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.
0.8-mm × 1.2-mm WCSP package of LMG1020 mi...