LMG3410R050

Product Folder Order Now Technical Documents Tools & Software Support & Community LMG3410R050, LMG3411R050 SNOSD81B – SEPTEMBER 2018 – REVISED JANUARY 2020 LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1 TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and layout – Adjustable drive strength for switching performance and EMI control – Digital fault status output signal – Only +12 V unregulated supply needed Integrated gate driver – Zero common source inductance – 20 ns Propagation delay for MHz operation – Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching – 25 to 100V/ns User adjustable slew rate Robust protection – Requires no external protection components – Overcurrent protection with less than 100 ns response – Greater than 150 V/ns Slew rate immunity – Transient overvoltage immunity – Overtemperature protection – Under voltage lock out (UVLO) Protection on all supply rails Robust protection – LMG3410R050: Latched overcurrent protection – LMG3411R050: Cycle-by-cycle overcurrent protection 2 Applications High density industrial and consumer power supplies Multi-level converters Solar inverters Industrial motor drives Uninterruptable power supp...