LMG3410R070

Product Folder Order Now Technical Documents Tools & Software Support & Community LMG3410R070, LMG3411R070 SNOSD10F – APRIL 2016 – REVISED MAY 2020 LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1 TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout – Adjustable Drive Strength for Switching Performance and EMI Control – Digital Fault Status Output Signal – Only +12 V Unregulated Supply Needed Integrated Gate Driver – Zero Common Source Inductance – 20 ns Propagation Delay for MHz Operation – Process-tuned Gate Bias Voltage for Reliability – 25 to 100V/ns User Adjustable Slew Rate Robust Protection – Requires No External Protection Components – Over-current Protection with <100ns Response – >150V/ns Slew Rate Immunity – Transient Overvoltage Immunity – Overtemperature Protection – UVLO Protection on All Supply Rails Device Options: – LMG3410R070: Latched Overcurrent Protection – LMG3411R070: Cycle-by-cycle Overcurrent Protection 2 Applications High Density Industrial and Consumer Power Supplies Multi-level Converters Solar Inverters Industrial Motor Drives Uninterruptable Power Supplies High Voltage Battery Chargers 3 Description The LMG341xR070 GaN power stage with integrated driver and p...