LPM9024

Preliminary Datasheet LPM9024 Dual N -Channel Enhancement Power MOSFET General Description The LPM9024 integrates two N-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9024 is Pb-free and Halogen-free. Features  Trench Technology  Single NMOS: VDS=20V RDS(ON) < 40mΩ @ VGS=2.5V, ID=5A RDS(ON) < 30mΩ @ VGS=4.5V, ID=5A  Super high density cell design  Extremely Low Threshold Voltage  Small package DFN-6L 2*2mm Order Information LPM9022 □ □ □ F: Pb-Free Package Type QV: DFN-6L Applications  Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Charging Pin Configurations S1 1 G1 2 D2 3 PAD1 D1 PAD2 D2 6 D1 5 G2 4 S2 D1 D2 G1 G2 S1 S2 Marking Information Device Marking Package LPM9024 DFN-6L Shipping...