LSG04N65

LSC04N65/LSD04N65/LSG04N65/LSH04N65 LonFET Lonten N-channel 650V, 4A, 0.96Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(on),max 0.96Ω IDM 12A Qg,typ 13nC Features  Ultra low RDS(on)  Ultra low gate charge (typ. Qg = 13nC)  100% UIS tested  RoHS compliant TO-251 TO-252 TO-220 D TO-220F Applications  Power faction correction (PFC).  Switched mode power supplies (SMPS).  Uninterruptible power supply (UPS). G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 3) Avalanche current, repetitive 3) Power Dissipation ( TC = 25°C ) - Derate above 25°C Operating and Storage Temperature Range Continuous diode forward current Diode pulse current Symbol VDSS ID IDM VGSS EAS EAR IAR PD TJ, TSTG IS IS,pulse LSX04N65 650 4 2.5 12 ±30 130 0.4 4 50 0.4 -55 to +150 4 12 Unit V A A A V mJ mJ A W W/°C °C A A Version 1.0 2016 1 www.lonten.cc LSC04N65/LSD04N65/LSG04N65/LSH04N65 LonFET Thermal Characteristics TO-251/TO-252/TO-220 Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RθJ...