LSIC2SD065A08A

GEN2 SiC Schottky Diode LSIC2SD065A08A, 650 V, 8 A, TO-220-2L LSIC2SD065A08A 650 V, 8 A SiC Schottky Barrier Diode RoHS Pb Description This series of silicon carbide (SiC) Schottky diodes has neg- SiC SchottklmiygaibxDliemiruoemvdeorespeerraetcinovgejruyncctuiorrnentet,mhpigehrastuurrgeeocfa1p7a5b°ilCit.yT, haensdea diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features AEC-Q101 qualified Positive temperature coefficient for safe operation and ease of paralleling 175 °C maximum operating junction temperature Excellent surge capability Extremely fast, temperature-independent switching behavior Dramatically reduced switching losses compared to Si bipolar diodes Circuit Diagram TO-220-2L Maximum Ratings Characteristics Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Non-Repetitive Forward Surge Current Power Dissipation Operating Junction Temper...