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LTE4208 Datasheet

Part Number LTE4208
Manufacturers Lite-On Technology Corporation
Logo Lite-On Technology Corporation
Description CLEAR TRANSPARENT COLOR PACKAGE
Datasheet LTE4208 DatasheetLTE4208 Datasheet (PDF)

LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only FEATURES * SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES * LOW COST MINIATURE PLASTIC END LOOKING PACKAGE * MECHANICALLY AND SPECTRALLY MATCHED TO THE LTR-3208 SERIES OF PHOTOTRANSISTOR * CLEAR TRANSPARENT COLOR PACKAGE PACKAGE DIMENSIONS www.DataSheet4U.com NOTES: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25mm(.010") unless otherwise noted. 3. Protruded resin under flange is 1.0mm(.039") max.

  LTE4208   LTE4208






Part Number LTE4208C
Manufacturers Lite-On Technology Corporation
Logo Lite-On Technology Corporation
Description GaAs T-1 3/4 Standard Infrared Emitting Diode
Datasheet LTE4208 DatasheetLTE4208C Datasheet (PDF)

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  LTE4208   LTE4208







Part Number LTE42012R
Manufacturers NXP
Logo NXP
Description NPN microwave power transistor
Datasheet LTE4208 DatasheetLTE42012R Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives go.

  LTE4208   LTE4208







Part Number LTE42008R
Manufacturers NXP
Logo NXP
Description NPN microwave power transistor
Datasheet LTE4208 DatasheetLTE42008R Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET LTE42008R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 24 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Input matching cell improves input impedance a.

  LTE4208   LTE4208







Part Number LTE42005S
Manufacturers NXP
Logo NXP
Description NPN microwave power transistor
Datasheet LTE4208 DatasheetLTE42005S Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET LTE42005S NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Input matching cell improves input impedance and allows an easier design of circuits AP.

  LTE4208   LTE4208







CLEAR TRANSPARENT COLOR PACKAGE

LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only FEATURES * SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES * LOW COST MINIATURE PLASTIC END LOOKING PACKAGE * MECHANICALLY AND SPECTRALLY MATCHED TO THE LTR-3208 SERIES OF PHOTOTRANSISTOR * CLEAR TRANSPARENT COLOR PACKAGE PACKAGE DIMENSIONS www.DataSheet4U.com NOTES: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25mm(.010") unless otherwise noted. 3. Protruded resin under flange is 1.0mm(.039") max. 4. Lead spacing is measured where the leads emerge from the package. 5. Specifications are subject to change without notice. Part No. : LTE-4208 DATA SHEET BNS-OD-C131/A4 Page : 1 of 3 LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only ABSOLUTE MAXIMUM RATINGS AT TA=25 PARAMETER Power Dissipation Peak Forward Current (300pps, 10 Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature [1.6mm(.063") From Body] s pulse) MAXIMUM RATING 100 3 50 5 -40 -55 260 to + 85 to + 100 for 5 Seconds UNIT mW A mA V ELECTRICAL OPTICAL CHARACTERISTICS AT TA=25 PARAMETER SYMBOL MIN. 0.44 0.64 0.80 1.12 1.30 1.70 2.10 3.31 4.81 6.02 8.40 9.72 12.72 15.72 940 50 VF IR 2 1/2 TYP. MAX. 0.96 1.20 1.68 1.94 2.54 3.14 7.22 9.02 12.63 14.58 19.08 23.58 UNIT Aperture Radiant Incidence Ee mW/c www.DataSheet4U.com Radiant Intensity IE mW/sr TEST BIN NO. CONDITION BIN A BIN B BIN C IF = 20mA BIN D1 BIN D2 BIN D3 BIN D4 BIN A.


2009-11-13 : LTE4208    LTE-4208    LTE4208C    LTE-4208C    SRD-12VDC-SL-C    SRD-1A-F-xxVDC    SRD-1A-S-xxVDC    SRDH-1A-F-xxVDC    SRDH-1A-S-xxVDC    AM79C965A   


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