LX5506M

LX5506M TM ® InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Broadband 4.9-5.9GHz Operation Advanced InGaP HBT Single-Polarity 3.3V Supply Power Gain ~ 30dB at 5.25GHz Power Gain > ~28dB Across 4.95.9GHz EVM ~ -30dB at Pout=+17dBm at 5.25GHz EVM ~ -30dB at Pout=+18dBm at 5.85GHz Total Current ~140mA for Pout = +17dBm at 5.25GHz (For High Duty Cycle of 90%) Maximum Linear Power ~ +22dBm for OFDM Mask Compliance Maximum Linear Efficiency ~ 20% On-chip Output Power Detector with Improved Frequency and LoadVSWR Insensitivity On-Chip Input Match On-Chip RF Decoupling Simple Output Match for Optimal Broadband EVM 2 Small Footprint: 3x3mm Low Profile: 0.9mm APPLICATIONS ƒ ƒ ƒ FCC U-NII Wireless IEEE 802.11a HyperLAN2 5GHz Cordless Phone The LX5506M www.datasheet4u.com is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2, and Japan’s WLAN applications in the 4.9-5.9 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, onchip input matching and output prematching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates with a single positive voltage supply of 3.3V (nominal), with up to +22dBm linear output power for 802.11a OFDM spectrum mask compliance, and low EVM of -30dB for up to +18dBm output power in the 4.9-5.9...