M01N60

N Channel MOSFET 1.0A M01N60 PIN CONFIGURATION TO-251 TO-252 FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature 1.Gate 2.Drain 3.Source ABSOLUTE MAXIMUM RATINGS RATING Drain to Current - Continuous - Pulsed Gate-to-Source Voltage – Continue - Non-repetitive Total Power Dissipation TO-251/252 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy – Tj = 25¢J (VDD =100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25£[) Thermal Resistance – Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8’’ form 10 seconds SYMBOL VALUE ID IDM VGS VGSM PD 50 TJ, TSTG EAS £ c £c -55 to 150 20 1.0 62.5 260 ¢J mJ ¢J /W ¢J 1.0 5.0 +/-30 +/-40 UNIT A V V W JC JA TL STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 N Channel MOSFET 1.0A M01N60 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¡] PARAMETERS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage CurrentForward Gate Threshhold Voltage Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Rise Time Fall Time Total Gate Charge Gate-Drain Charge Gate-Drain Charge Intemal Drain Inductance Internal Drain Inductan...