M29W128GH

www.DataSheet4U.com M29W128GH M29W128GL 128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory Features „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional) „ Asynchronous random/page read – Page size: 8 words or 16 bytes – Page access: 25, 30 ns – Random access: 60 (only available upon customer request) or 70, 80 ns „ Fast program commands – 32 words (64-byte write buffer) „ Enhanced buffered program commands – 256 words „ Programming time – 16 μs per byte/word typical – Chip program time: 5 s with VPPH and 8 s without VPPH „ Memory organization – M29128GH/L: 128 main blocks, 128 Kbytes/64 Kwords each „ Program/erase controller – Embedded byte/word program algorithms „ Program/ erase suspend and resume – Read from any block during program suspend – Read and program another block during erase suspend BGA BGA TSOP56 (N) 14 x 20 mm TBGA64 (ZA) 10 x 13 mm FBGA (ZS) 11 x 13 mm „ Unlock Bypass/Block Erase/Chip Erase/Write to Buffer/Enhanced Buffer Program commands – Faster production/batch programming – Faster block and chip erase „ VPP/WP pin for fast program and write: protects first or last block regardless of block protection settings „ Software protection: – Volatile protection – Non-volatile protection – Password protection „ Common flash interface – 64-bit security code „ 128-word extended memory block – Extra block used as security block or to store add...