M29W160FT M29W160FB M29W320FT M29W320FB
16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory
Features
...
M29W160FT M29W160FB M29W320FT M29W320FB
16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory
Features
Supply
voltage – VCC = 2.5 V to 3.6 V (access time: 80 ns) or 2.7 to 3.6 V (access time: 70 ns) for Program, Erase and Read – VPP = 12 V for Fast Program (optional, available in the M29W320FT/B only)
Access time: 70, 80 ns
Programming time – 10 μs per byte/word typical
Memory organization: – M29W160FT/B: 35 blocks including 1 boot block (top or bottom location), 2 parameter blocks and 32 main blocks – M29W320FT: 67 blocks including 1 boot block (top or bottom location), 2 parameter blocks and 64 main blocks
Program/Erase controller – Embedded byte/word program algorithms
Erase Suspend and Resume modes – Read and Program another block during Erase Suspend
Unlock Bypass Program command – Faster production/batch programming
VPP/WP pin for Fast program and Write Protect (available in the M29W320FT/B only)
Temporary block unprotection mode
Common Flash interface – 64 bit security code
Low power consumption – Standby and Automatic Standby
100,000 Program/Erase cycles per block
TSOP48 (N) 12 x 20 mm
FBGA
TFBGA48 (ZA) 6 x 8 mm
Electronic signature – Manufacturer code: 0020h – Top device codes M29W160FT: 22C4h M29W320FT: 22CAh – Bottom device codes M29W160FB: 2249h M29W320FB: 22CBh
Automotive device grade 3: – Temperature: –40 to 125 °C – Automotive grade certified
TSOP48 package is RoHS compliant
November 2008
208011-04
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