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M29W256GL Datasheet

Part Number M29W256GL
Manufacturers Micron Technology
Logo Micron Technology
Description Parallel NOR Flash Embedded Memory
Datasheet M29W256GL DatasheetM29W256GL Datasheet (PDF)

256Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL Features • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.6V (I/O buffers) – VPPH = 12V for fast program (optional) • Asynchronous random/page read – Page size: 8 words or 16 bytes – Page access: 25ns, 30ns – Random access: 60ns1, 70ns, 80ns • Fast program commands: 32-word (64-byte) write buffer • Enhanced buffered program commands: 256-word • Program time – 16µs per b.

  M29W256GL   M29W256GL






Part Number M29W256GH
Manufacturers Micron Technology
Logo Micron Technology
Description Parallel NOR Flash Embedded Memory
Datasheet M29W256GL DatasheetM29W256GH Datasheet (PDF)

256Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL Features • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.6V (I/O buffers) – VPPH = 12V for fast program (optional) • Asynchronous random/page read – Page size: 8 words or 16 bytes – Page access: 25ns, 30ns – Random access: 60ns1, 70ns, 80ns • Fast program commands: 32-word (64-byte) write buffer • Enhanced buffered program commands: 256-word • Program time – 16µs per b.

  M29W256GL   M29W256GL







Parallel NOR Flash Embedded Memory

256Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL Features • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.6V (I/O buffers) – VPPH = 12V for fast program (optional) • Asynchronous random/page read – Page size: 8 words or 16 bytes – Page access: 25ns, 30ns – Random access: 60ns1, 70ns, 80ns • Fast program commands: 32-word (64-byte) write buffer • Enhanced buffered program commands: 256-word • Program time – 16µs per byte/word TYP – Chip program time: 10s with V PPH and 16s without V PPH • Memory organization – Uniform blocks: 256 main blocks, 128KB, or 64Kwords each • Program/erase controller – Embedded byte/word program algorithms • Program/erase suspend and resume capability – Read from any block during a PROGRAM SUSPEND operation – Read or program another block during an ERASE SUSPEND operation • Unlock bypass, block erase, chip erase, write to buffer and program – Fast buffered/batch programming – Fast block/chip erase • VPP/WP# pin protection – Protects first or last block regardless of block -protection settings • Software protection – Volatile protection – Nonvolatile protection – Password protection • Extended memory block – 128-word (256-byte) memory block for permanent, secure identification – Programmed or locked at the factory or by the customer • Common Flash interface – 64-bit security code • Low power consumption: Standby and automatic mode • JESD47H-compliant – 100,000 minimum PROGR.


2014-08-28 : SiHF620S    B0809J50ATI    B0922N7575AHF    B0922J7575A50HF    BD0205F5050AHF    BD0810J50100AHF    BD0810J50200AHF    BD0826J50200AHF    BD1631J50100AHF    BD1722N5050AHF   


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