M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s ...
M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY
VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional)
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Figure 1. Packages
ACCESS TIME: 70, 90 ns PROGRAMMING TIME – 10 µs per Byte/Word typical – Double Word Programming Option
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135 MEMORY BLOCKS – 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location) – 127 Main Blocks, 64 KBytes each
TSOP48 (N) 12 x 20mm
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PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend
FBGA
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TFBGA63 (ZA) 63 ball array
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UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming VPP/WP Pin for FAST PROGRAM and WRITE PROTECT TEMPORARY BLOCK UNPROTECTION MODE COMMON FLASH INTERFACE – 64-bit Security Code EXTENDED MEMORY BLOCK – Extra block used as security block or to store additional information
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LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W640DT: 22DEh – Bottom Device Code M29W640DB: 22DFh
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April 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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M29W640DT, M29W640DB
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