M36P0R9060N0

M36P0R9060N0 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package Preliminary Data Feature summary ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory – 1 die of 64 Mbit (4Mb x16) PSRAM Supply voltage – VDDF = VCCP = VDDQ = 1.7 to 1.95V – VPPF = 9V for fast program Electronic signature – Manufacturer Code: 20h – Device Code: 8833 ECOPACK® package Multiplexed Address/Data Synchronous / Asynchronous Read – Synchronous Burst Read mode: 108MHz, 66MHz – Asynchronous Page Read mode – Random Access: 96ns ■ ■ FBGA ■ TFBGA107 (ZAN) ■ 100,000 Program/erase cycles per block Block locking – All Blocks locked at power-up – Any combination of Blocks can be locked with zero latency – WPF for Block Lock-Down – Absolute Write Protection with VPPF = VSS Common Flash Interface (CFI) Multiplexed Address/Data bus Asynchronous operating modes – Random Read: 70ns access time – Asynchronous Write Synchronous modes – Synchronous Read: Fixed length (4-, 8-, 16-, and 32-Word) or continuous burst – Clock Frequency: 83MHz (max) – Synchronous Write: continuous burst Low-power features – Partial Array Self-Refresh (PASR) – Deep Power-Down (DPD) mode – Automatic Temperature-compensated SelfRefresh ■ Flash memory ■ ■ ■ PSRAM ■ ■ Programming time – 4.2µs typical Word program time using www.DataSheet4U.com Buffer Enhanced Factory Program command ■ ■ Memory organization – Mult...