M36P0R9070E0

M36P0R9070E0 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM Supply voltage – VDDF = VCCP = VDDQ = 1.7 to 1.95V – VPPF = 9V for fast program Electronic signature – Manufacturer Code: 20h – Device Code: 8819 ECOPACK® package available FBGA ■ TFBGA107 (ZAC) ■ ■ ■ Flash memory ■ Block locking – All Blocks locked at power-up – Any combination of Blocks can be locked with zero latency – WPF for Block Lock-Down – Absolute Write Protection with VPPF = VSS Synchronous / Asynchronous Read – Synchronous Burst Read mode: 108MHz, 66MHz – Asynchronous Page Read mode – Random Access: 96ns PSRAM ■ ■ Access time: 70ns User-selectable operating modes – Asynchronous modes: Random Read, and Write, Page Read – Synchronous modes: NOR-Flash, Full Synchronous (Burst Read and Write) Asynchronous Page Read – Page Size: 4, 8 or 16 Words – Subsequent Read Within Page: 20ns Burst Read – Fixed Length (4, 8, 16 or 32 Words) or Continuous – Maximum Clock Frequency: 80MHz Low Power Consumption – Active Current: < 25mA – Standby Current: 200µA – Deep Power-Down Current: 10µA Low Power Features – Partial Array Self Refresh (PASR) – Deep Power-Down (DPD) Mode Programming time – 4.2µs typical Word program time using Buffer Enhanced Factory Program www.DataSheet4U.com command ■ ■ ...