M52D2561616A

ESMT Mobile SDRAM FEATURES  1.8V power supply  LVCMOS compatible with multiplexed address  Four banks operation  MRS cycle with address key programs - CAS Latency (3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave)  EMRS cycle with address  All inputs are sampled at the positive going edge of the system clock  Special function support - PASR (Partial Array Self Refresh) - TCSR (Temperature Compensated Self Refresh) - DS (Driver Strength)  DQM for masking  Auto & self refresh  64ms refresh period (8K cycle) M52D2561616A (2F) 4M x 16 Bit x 4 Banks Mobile Synchronous DRAM ORDERING INFORMATION Product ID Max Freq. Package Comments M52D2561616A-5BG2F 200MHz 54 Ball FBGA Pb-free M52D2561616A-6BG2F 166MHz 54 Ball FBGA Pb-free M52D2561616A-7BG2F 143MHz 54 Ball FBGA Pb-free GENERAL DESCRIPTION The M52D2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits. Synchronous de...