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M5K4164ANP-15 DRAM Datasheet PDF

64K-Bit DRAM

64K-Bit DRAM

 

 

 

Part Number M5K4164ANP-15
Description 64K-Bit DRAM
Feature MITSUBISHI LSls M5K4164ANP-12, -15 65 5 36-BIT (65 536-WORD BY I-BIT) DYNAMIC R AM DESCRIPTION This is a family of 65 536-word by l-bit dynamic RAMs, fabrica ted with the high performance N-channel silicongate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.
The use of do uble-layer polysilicon process technolo gy and a single-transistor dynamic stor age cell privide high circuit density a t reduced costs, and the use of dynamic circuitry including sense amplifiers a ssures low power dissipation.
Multiplex ed address inp .
Manufacture Mitsubishi
Datasheet
Download M5K4164ANP-15 Datasheet

M5K4164ANP-15

 

 

 


 

 

 

Part Number M5K4164ANP-15
Description 64K-Bit DRAM
Feature MITSUBISHI LSls M5K4164ANP-12, -15 65 5 36-BIT (65 536-WORD BY I-BIT) DYNAMIC R AM DESCRIPTION This is a family of 65 536-word by l-bit dynamic RAMs, fabrica ted with the high performance N-channel silicongate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.
The use of do uble-layer polysilicon process technolo gy and a single-transistor dynamic stor age cell privide high circuit density a t reduced costs, and the use of dynamic circuitry including sense amplifiers a ssures low power dissipation.
Multiplex ed address inp .
Manufacture Mitsubishi
Datasheet
Download M5K4164ANP-15 Datasheet

M5K4164ANP-15

 

 

 

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