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M5M5256DP-70LL-I RAM Datasheet PDF262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| Part Number | M5M5256DP-70LL-I |
|---|---|
| Description | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| Feature | '97. 4. 7 MITSUBISHI LSIs M5M5256DP,KP,F P,VP,RV -45LL-I,-55LL-I,-70LL-I, -45XL- I,-55XL-I,-70XL-I 262144-BIT (32768-WOR D BY 8-BIT) CMOS STATIC RAM DESCRIPTIO N The M5M5256DP,KP,FP,VP,RV is 262,144- bit CMOS static RAMs organized as 32,76 8-words by 8-bits which is fabricated u sing high-performance 3 polysilicon CMO S technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough f or battery back-up application. It is i deal for the memory systems which requi re simple interface. Especially the M5M 5256DVP,RV are . |
| Manufacture | Mitsubishi |
| Datasheet |
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| Part Number | M5M5256DP-70LL-I |
|---|---|
| Description | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| Feature | '97. 4. 7 MITSUBISHI LSIs M5M5256DP,KP,F P,VP,RV -45LL-I,-55LL-I,-70LL-I, -45XL- I,-55XL-I,-70XL-I 262144-BIT (32768-WOR D BY 8-BIT) CMOS STATIC RAM DESCRIPTIO N The M5M5256DP,KP,FP,VP,RV is 262,144- bit CMOS static RAMs organized as 32,76 8-words by 8-bits which is fabricated u sing high-performance 3 polysilicon CMO S technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough f or battery back-up application. It is i deal for the memory systems which requi re simple interface. Especially the M5M 5256DVP,RV are . |
| Manufacture | Mitsubishi |
| Datasheet |
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