MITSUBISHI SEMICONDUCTORS
M81721FP
600V HIGH VOLTAGE HALF BRIDGE DRIVER
DESCRIPTION M81721FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. FEATURES ¡Floating supply voltage up to 600V ¡Low quiescent power supply current ¡Separate sink and source current output up to ±1A (typ) ¡Active Miller effect clamp NMOS with sink current up to –1A (typ) ¡Input noise filters ¡Over-current detection and output shutdown ¡High side under voltage lockout ¡FO pin which can input and output Fault signals to communicate with controllers and synchronize the shut down with other phases ¡24-Lead SSOP PACKAGE
PIN CONFIGURATION (TOP VIEW)
24
NC NC VB HPOUT HNOUT1 HNOUT2 VS NC NC NC NC NC
NC HIN LIN FO_RST CIN GND FO VCC LPOUT LNOUT1 LNOUT2 VNO
1 12
13
APPLICATIONS Power MOSFET and IGBT gate driver for Medium and Micro inverter or general purpose.
Outline: 24P2Q
BLOCK DIAGRAM
www.DataSheet.net/
VB GND UV HPOUT HNOUT1 HNOUT2
Logic Filter
VS
VCC Vreg
HIN Interlock & Noise Filter LIN
Pulse Generator
VREG
Vref
VCC
CIN
Vref
+ –
Protection Logic
LPOUT LNOUT1 LNOUT2
VNO Filter FO
FO_RST
Filter
Aug. 2009 1
Datasheet pdf - http://www.DataSheet4U.co.kr/
MITSUBISHI SEMICONDUCTORS
M81721FP
600V HIGH VOLTAGE HALF BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS Absolute maximum ratings indicate limitation beyond which destruction of device may occur. All voltage parameters are absolute voltage reference to GND unless otherwise specified.
Symbol VB...