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MA2SD25 type Datasheet PDFSilicon epitaxial planar type Silicon epitaxial planar type |
| Part Number | MA2SD25 |
|---|---|
| Description | Silicon epitaxial planar type |
| Feature | Schottky Barrier Diodes (SBD)
MA2SD25
S ilicon epitaxial planar type
Unit: mm
For super high speed switching
0. 80+0. 0 5 –0. 03 0. 80±0. 05 0. 60+0. 05 –0. 03 0. 12+0. 05 –0. 02 (0. 80) (0. 60) 0. 0 1±0. 01 5° I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage ( DC) Repetitive peak reverse-voltage Pea k forward current Average forward curre nt Non-repetitive peak forwardsurge-cur rent * Junction temperature Storage tem perature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 15 15 300 200 1 125 − 55 to +125 Unit V 5° 2 0. 30±0. 05 0+ 0 –0. 05 0. 01±0. 01 mA mA A °C °C 1 : Anode 2 : Cathode EIAJ : SC-7 . |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
|
|
| Part Number | MA2SD25 |
|---|---|
| Description | Silicon epitaxial planar type |
| Feature | Schottky Barrier Diodes (SBD)
MA2SD25
S ilicon epitaxial planar type
Unit: mm
For super high speed switching
0. 80+0. 0 5 –0. 03 0. 80±0. 05 0. 60+0. 05 –0. 03 0. 12+0. 05 –0. 02 (0. 80) (0. 60) 0. 0 1±0. 01 5° I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage ( DC) Repetitive peak reverse-voltage Pea k forward current Average forward curre nt Non-repetitive peak forwardsurge-cur rent * Junction temperature Storage tem perature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 15 15 300 200 1 125 − 55 to +125 Unit V 5° 2 0. 30±0. 05 0+ 0 –0. 05 0. 01±0. 01 mA mA A °C °C 1 : Anode 2 : Cathode EIAJ : SC-7 . |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
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