MA3X720

www.DataSheet4U.com Schottky Barrier Diodes (SBD) MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification ■ Features Forward current (Average) IF(AV) = 500 mA rectification is possible Optimum for high frequency rectification because of its short reverse recovery time trr Low forward voltage VF and good rectification efficiency 10˚ 1 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 2 (0.65) (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 1.1+0.2 –0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maximum peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current * Junction temperature Storage temperature Symbol VR VRM IF(AV) IFSM Tj Tstg Rating 40 40 500 2 125 −55 to +125 Unit V V mA A °C °C EIAJ: SC-59 0 to 0.1 1.1+0.3 –0.1 1: Anode 2: N.C. 3: Cathode Mini3-G1 Package Marking Symbol: M2W Internal Connection 3 Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) 1 2 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Forward voltage Reverse current Terminal capacitance Reverse recovery time * Symbol VF IR Ct trr VR = 35 V VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 IR, RL = 100 Ω 60 5 Conditions IF = 500 mA Min Typ Max 0.55 100 Unit V µA pF ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention...