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MA4Z159 Datasheet

Part Number MA4Z159
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon epitaxial planar type
Datasheet MA4Z159 DatasheetMA4Z159 Datasheet (PDF)

Switching Diodes www.DataSheet4U.com MA4Z159 (MA4S159) Silicon epitaxial planar type Unit: mm For switching circuits s Features • Small S-mini type 4-pin package • Two isolated elements contained in one package, allowing highdensity mounting • Flat lead type, resulting in improved mounting efficiency and solderability with the high-speed mounting machine • Short reverse recovery time trr • Small terminal capacitance, Ct 2.1±0.1 1.3±0.1 4 0.7±0.1 3 1.25±0.1 2.1±0.1 1 2 0.16+0.1 –0.06 0.3±0..

  MA4Z159   MA4Z159






Silicon epitaxial planar type

Switching Diodes www.DataSheet4U.com MA4Z159 (MA4S159) Silicon epitaxial planar type Unit: mm For switching circuits s Features • Small S-mini type 4-pin package • Two isolated elements contained in one package, allowing highdensity mounting • Flat lead type, resulting in improved mounting efficiency and solderability with the high-speed mounting machine • Short reverse recovery time trr • Small terminal capacitance, Ct 2.1±0.1 1.3±0.1 4 0.7±0.1 3 1.25±0.1 2.1±0.1 1 2 0.16+0.1 –0.06 0.3±0.05 5˚ 0 to 0.1 s Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) *: t = 1 s Single Double Single Double Single Double Tj Tstg IFSM IFM Symbol VR VRM IF(AV) Rating 80 80 100 75 225 170 500 375 150 −55 to +150 °C °C 2 mA 1 mA Unit V V mA 1: Anode 1 2: Anode 2 EIAJ: SC-82 5˚ (0.425) 3: Cathode 2 4: Cathode 1 SMini4-F1 Package Marking Symbol: M1B Internal Connection 4 3 s Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 80 0.9 2 3 0.95 Conditions Min Typ Max 0.1 1.2 Unit µA V V pF ns Note) 1. Rated input/output frequency: 100 MHz 2. *: trr measuring circuit Bias Application Unit N-50B.


2009-06-24 : 2SD1083    D633    2SD1087    BDW39    BDW40    BDW42    BDW43    BDW44    BDW45    BDW46   


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