Schottky Barrier Diodes (SBD)
MA776
Silicon epitaxial planer type
For the switching circuit
s Features
q Sealed in small...
Schottky Barrier Diodes (SBD)
MA776
Silicon epitaxial planer type
For the switching circuit
s Features
q Sealed in small glass package (DO-34) q 5mm pitch insertion possible q Low forward rise
voltage VF and satisfactory wave detection effi-
ciency q Temperature coefficient of forward characteristic is small. q Extremely low reverse current IR q VR (DC value)= 40V guaranteed
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Reverse
voltage (DC) Repetitive peak reverse
voltage Peak forward current Average forward current Junction temperature Storage temperature
Symbol VR VRRM IFM IF Tj Tstg
Rating 40 40 150 30 125
– 55 to +125
Unit V V
mA mA ˚C ˚C
2SK1606
ø0.45 max.
COLORED BAND INDICATES CATHODE
1
Unit : mm
13 min.
0.2max.
1st Band 2nd Band
2.2±0.3
13 min.
0.2 max.
2
ø1.75 max.
1 : Cathode 2 : Anode JEDEC : DO-34
s Electrical Characteristics (Ta= 25˚C)
Parameter
Symbol
Condition
min typ max Unit
Reverse current (DC) Forward
voltage (DC) Terminal capacitance Reverse recovery time
Detection efficiency
IR VR= 40V
VF1 IF=1mA
VF2 IF= 30mA
Ct VR = 1V, f=1MHz
trr*
IF = IR=100mA Irr= 1mA , RL=100Ω
η Vin= 3V(peak), f= 30MHz RL= 3.9kΩ, CL=10pF
200 nA 0.4 V 1V 1.3 pF
2 ns
60 %
Note 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on charge of a human body and leakage from the equipment used.
2. Rated input/output frequency : 2000MHz 3. * trr measuring circuit
Bias Insertion Unit N-50BU
A
Pulse...
