MAAMGM0002-DIE

www.DataSheet4U.com RoHS Compliant MAAMGM0002-DIE Rev E Amplifier, Distributed, 0.1W 1.0-18.0 GHz Features ♦ ♦ ♦ ♦ 0.1 Watt Saturated Output Power Level 4 dB Typical Noise Figure Select-at-Test Biasing MSAG™ Process Description The MAAMGM0002-Die is a 0.1W Distributed Amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. The MMIC can be used as a broadband amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM’s GaAs Multifunction SelfAligned Gate Process. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications ♦ Test Equipment ♦ Electronic Warfare ♦ Radar Also Available in: Description Part Number Ceramic Package MAAMGM0002 Sample Board (Die) MAAMGM0002-DIE-SMB SAMPLES Sample Board (Packaged) MAAMGM0002-SMB Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 5V, IDQ = 75 mA2, Pin = 13 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal ...