MAAP-015024
Power Amplifier, 8 W 14.5 - 17.5 GHz
Rev. V3
Features
8 W Power Amplifier 20 dB Small Signal Gain 3...
MAAP-015024
Power Amplifier, 8 W 14.5 - 17.5 GHz
Rev. V3
Features
8 W Power Amplifier 20 dB Small Signal Gain 39 dBm Saturated Pulsed Output Power Dual Sided Bias Architecture 100% On-wafer DC & RF Power Tested 100% Visual Inspection to MIL-STD-833 Bare Die
Functional Schematic
VG1 VD1
13
VG2
6
VD2 VG3
9 11
VD3
13
Description
The MAAP-015024 three stage 14.5 - 17.5 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 39 dBm and a small signal gain of 20 dB. The power amplifier must be biased directly on both sides of the die.
This MMIC uses MACOM’s GaAs pHEMT device technology and is based upon optical gate lithography to ensure high repeatability and uniformity. The chip has surface passivation for protection and backside via holes and gold metallization to allow a conductive epoxy die attach process.
RFIN 28
14 RFOUT
27 25
22
VG1 VD1 VG2
Pad Configuration
19 17
VD2 VG3
15
VD3
Pad No.
Function
Description
This device is well suited for communication and radar applications.
1 VG1 1st Stage Gate
Voltage 3 VD1 1st Stage Drain
Voltage
6 VG2 2nd Stage Gate
Voltage
Ordering Information
9 VD2 2nd Stage Drain
Voltage 11 VG3 3rd Stage Gate
Voltage
Part Number MAAP-015024-DIE MAAP-015024-DIEEV1 MAAP-015024-DIEEV2
Package
Die in vacuum release gel pack
Direct gate bias sample board
On chip gate bias sample board
13 VD3 3rd Stage Drain
Voltage
14 RFOUT
RF Output
15 VD3 3rd Stage Drain
Voltage
17 VG3 3rd Stage Gate
Voltage 19 ...