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MAAP-015036 Datasheet

Part Number MAAP-015036
Manufacturers MA-COM
Logo MA-COM
Description Power Amplifier
Datasheet MAAP-015036 DatasheetMAAP-015036 Datasheet (PDF)

MAAP-015036 Power Amplifier, 15 W 8.5 - 10.5 GHz Features  15 W Power Amplifier  42 dBm Saturated Pulsed Output Power  17 dB Large Signal Gain  PSAT >40% Power Added Efficiency  Dual Sided Bias Architecture  On Chip Bias Circuit  100% On-Wafer DC, RF and Output Power Testing  100% Visual Inspection to MIL-STD-883 Method 2010 Description The MAAP-015036 is a two stage GaAs MMIC power amplifier operating from 8.5 - 10.5 GHz, with a saturated pulsed output power of 42 dBm and a large signal.

  MAAP-015036   MAAP-015036






Part Number MAAP-015035
Manufacturers MA-COM
Logo MA-COM
Description Power Amplifier
Datasheet MAAP-015036 DatasheetMAAP-015035 Datasheet (PDF)

MAAP-015035 Power Amplifier, 12 W 8.5 - 11.5 GHz Features  12 W X-Band Power Amplifier  36 dB Small Signal Gain  41 dBm Saturated Pulsed Output Power  40% Power Added Efficiency  On Chip Gate Bias Circuit  100% On-wafer DC & RF Power Tested  100% Visual Inspection to MIL-STD-833  Bare Die Description The MAAP-015035 is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small signal gain of 36 dB. The gate term.

  MAAP-015036   MAAP-015036







Part Number MAAP-015030
Manufacturers MA-COM
Logo MA-COM
Description Power Amplifier
Datasheet MAAP-015036 DatasheetMAAP-015030 Datasheet (PDF)

MAAP-015030 Power Amplifier, 13 W 8.5 - 11.75 GHz Features  12 W X-Band Power Amplifier  21 dB Large Signal Gain  41 dBm Saturated Pulsed Output Power  40% Power Added Efficiency  On Chip Gate Bias Circuit  100% On-wafer DC & RF Power Tested  100% Visual Inspection to MIL-STD-833  Bare Die Description The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm and a large signal gain of 21 dB. The power amplifier can be biased using a.

  MAAP-015036   MAAP-015036







Power Amplifier

MAAP-015036 Power Amplifier, 15 W 8.5 - 10.5 GHz Features  15 W Power Amplifier  42 dBm Saturated Pulsed Output Power  17 dB Large Signal Gain  PSAT >40% Power Added Efficiency  Dual Sided Bias Architecture  On Chip Bias Circuit  100% On-Wafer DC, RF and Output Power Testing  100% Visual Inspection to MIL-STD-883 Method 2010 Description The MAAP-015036 is a two stage GaAs MMIC power amplifier operating from 8.5 - 10.5 GHz, with a saturated pulsed output power of 42 dBm and a large signal gain of 18 dB. This power amplifier uses GaAs pHEMT device technology and is based upon optical gate lithography to ensure high repeatability and uniformity. The chip has surface passivation for protection and backside via holes and gold metallisation to allow a conductive epoxy die attach process. This device is well suited for communications, Point to Point radio and radar applications. Ordering Information MAAP-015036-DIE MAAP-015036-DIEEV1 MAAP-015036-DIEEV2 1. Die quantity varies. Die in Gel Pack1 Sample Board Direct Gate Bias Sample Board On-Chip Gate Bias Functional Schematic Rev. V1 Pin Configuration2 1 VG1 15 VD2 2 GND 16 GND 3 VSS1 17 GND 4 V1_5 18 VD1 5 GND 19 VG2 6 VSS2 20 GND 7 V2_5 21 V2_5 8 GND 22 VSS2 9 VG2 23 GND 10 VD1 24 V1_5 11 GND 25 VSS1 12 GND 26 GND 13 VD2 27 14 RFOUT 28 VG1 RFIN 2. Backside metal is RF, DC and thermal ground. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Solutions Inc..


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