MAAPGM0027-DIE

www.DataSheet4U.com 2.0-4.0 GHz 1W Power Amplifier Features ♦ ♦ ♦ ♦ 1 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation MSAG™ MESFET Process Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility MAAPGM0027-DIE RO-P-DS-3014 B Preliminary Information Description The MAAPGM0027-Die is a 2-stage power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications ♦ Wireless Local Loop 3.4-3.6 GHz ♦ MMDS 2.5-2.7 GHz ♦ Radar Electrical Characteristics: TB = 40°C1, Z0 = 50 Ω, VDD = 8V, IDQ ≈ 230mA2, Pin = 10 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compre...