MAAPGM0027

www.DataSheet4U.com 1.0W Power Amplifier 2.0-4.0 GHZ RO-P-DS-3097 Preliminary Information MAAPGM0027 Features ♦ ♦ ♦ ♦ 1.0W Operation Variable Drain Voltage (4-10V) Operation MSAG™ Process 5x5 mm 20 Lead MLP Package Description The MAAPGM0027 is a packaged, 2-stage, 1.0 W power amplifier with on-chip bias networks in a 20 lead MLP package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. APGM002 Primary Applications ♦ Wireless Local Loop 3.4-3.6 GHz ♦ MMDS 2.5-2.7 GHz ♦ Radar Maximum Operating Conditions 1 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF, 40% IDSS) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Tempe...